Samsung Electronics announced that it has begun mass producing the industry’s first 4-gigabyte DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface, for use in high performance computing (HPC), high end graphics cards and enterprise servers.
Samsung’s new HBM2 DRAM package features 256GBps of bandwidth, which is equivalent to a more than seven-fold increase over the 36GBps bandwidth of a top-of-the-line GDDR5 DRAM chip. The new chip is also more power efficient as it offers double the bandwidth per watt over a GDDR5 chipsets.
Samsung plans to produce an 8GB HBM2 DRAM package within this year. The 8GB HBM2 DRAM chipset is 5% the size of an 8GB GDDR5 chip which leaves more space for graphics card designers to add more transistors or enhance thermal flow.
